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Samsung samples low-power 512Mbit DRAM | |
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| Time: 21:05 EST/02:05 GMT | News Source: EBN | Posted By: Guillaume Hébert | ||
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Samsung Electronics Co. on Monday said it is sampling the industry's first 512-megabit low power mobile SDRAM for handsets, PDAs and digital cameras. Like all low power mobile memory chips, the new Samsung 512-Mbit SDRAM operates at 2.5 volts, compared to 3.3V for conventional memory. It also uses half the power of standard SDRAMs in standby mode through a partial array self refresh of only those memory banks containing data, according to the company. A temperature compensated self-refresh also is adjustable according to temperature of the chip. Samsung said the new low power chip is made on its 0.15-micron process. It is available in a smaller package size than conventional TSOP -- in a 16-bit bus 54-ball BGA or 32-bit bus 90-ball BGA. Because the 512-Mbit low power mobile chip is only now sampling, prices haven't been set for volume production. | ||
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