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NEC Electronics Delivers 130-Nanometer, 314-Megahertz Embedded DRAM Technology | |
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| Time: 20:47 EST/01:47 GMT | News Source: Press Release | Posted By: Fred Fernandez | ||
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"Traditionally, high-bandwidth data interface applications have relied on embedded SRAM along with buffer memory and/or discrete DRAM. The former can be expensive and power-hungry, while the latter limits performance by requiring packets to be moved between chips," said Takatoshi Koga, general manager, 2nd Custom LSI Division, NEC Electronics Corporation. "Combining DRAM density with SRAM-like performance, low latency and robust performance in 130 nm technology, our embedded DRAM overcomes the performance, power and latency limitations of both embedded SRAM and discrete DRAM. With large, fast blocks of memory on chip, designers easily can achieve dramatic improvements in system performance." | ||
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